Title :
Reduction of leakage current in chemical-vapor-deposited Ta2 O5 thin films by furnace N2O annealing
Author :
Sun, S.C. ; Chen, T.F.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
6/1/1997 12:00:00 AM
Abstract :
In this brief, we present a post-deposition annealing technique that employs furnace annealing in N2O (FN2O) to reduce the leakage current of chemical-vapor-deposited tantalum penta-oxide (CVD Ta2O5) thin films. Compared with furnace annealing in O2 (FO) and rapid thermal annealing in N 2O (N2O), FN2O annealing proved to have the lowest leakage current and the most reliable time-dependent dielectric breakdown (TDDB)
Keywords :
CVD coatings; annealing; dielectric thin films; electric breakdown; leakage currents; tantalum compounds; N2O; Ta2O5; chemical-vapor-deposited tantalum penta-oxide thin film; furnace N2O annealing; leakage current; time-dependent dielectric breakdown; Capacitors; Chemical vapor deposition; Dielectric thin films; Furnaces; Leakage current; Random access memory; Rapid thermal annealing; Rapid thermal processing; Sun; Transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
