DocumentCode
1547893
Title
Hydrogen Peroxide Removal From Chemical–Mechanical Planarization Wastewater
Author
Dakubo, Francis ; Baygents, James C. ; Farrell, Jay A.
Author_Institution
Freeport-McMoRan Copper and Gold, Morenci, AZ, USA
Volume
25
Issue
4
fYear
2012
Firstpage
623
Lastpage
629
Abstract
The goal of this paper was to identify and investigate a practical method for removing hydrogen peroxide from wastewater generated during chemical and mechanical planarization of integrated circuits. Rates of hydrogen peroxide destruction were investigated using: 1) ultraviolet (UV) light; 2) electrochemical reduction and oxidation; 3) two activated carbon catalysts; and 4) a pyrolusite catalyst. The effects of ethylenediaminetetraaceticacid (EDTA), ethylenediamine (ED), and dissolved copper ions on rates of
destruction were also investigated. Hydrogen peroxide destruction rates using UV light and the electrochemical reactor were too slow to be useful in a practical treatment scheme. Both activated carbon and pyrolusite catalysts produced fast rates of
destruction. However, the presence of EDTA and ED decreased reaction rates on activated carbon, whereas rates on pyrolusite were unaffected. Column experiments with the pyrolusite yielded greater than 99.9%
destruction using empty bed contact times as short as 1 min.
Keywords
Hydrogen peroxide; Integrated circuit manufacture; Planarization; Wastewater treatment; Chemical mechanical planarization (CMP); hydrogen peroxide; pyrolusite; wastewater treatment;
fLanguage
English
Journal_Title
Semiconductor Manufacturing, IEEE Transactions on
Publisher
ieee
ISSN
0894-6507
Type
jour
DOI
10.1109/TSM.2012.2205283
Filename
6225445
Link To Document