Title :
Optoelectronic characteristics of a-SiC:H-based P-I-N thin-film light-emitting diodes with low-resistance and high-reflectance N+ -a-SiCGe:H layer
Author :
Chen, Yen-Ann ; Chiou, Chen-Fu ; Tsay, Wen-Chin ; Laih, Li-Hong ; Hong, Jyh-Wong ; Chang, Chun-Yen
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
fDate :
9/1/1997 12:00:00 AM
Abstract :
The graded-gap a-SiC:H-based p-i-n thin-film light-emitting diodes (TFLEDs) with an additional low-resistance and high-reflectance n+ -a-SiCGe:H layer were proposed and fabricated on indium-tin-oxide (ITO)-coated glass substrate in this paper. For a finished TFLED, a brightness of 720 cd/m2 could be obtained at an injection current density of 600 mA/cm2, and its EL (electroluminescence) threshold voltage was lowered to 8.6 V. In addition, the effects of reflectance and resistance of a-SiCGe:H film on the performance of TFLED were discussed. The optimum rapid thermal annealing (RTA) conditions for fabrication of TFLED after metallization were also studied and employed to improve the optoelectronic characteristics of TFLED
Keywords :
Ge-Si alloys; amorphous semiconductors; brightness; electroluminescence; elemental semiconductors; hydrogen; light emitting diodes; p-i-n diodes; rapid thermal annealing; semiconductor materials; silicon; 8.6 V; PIN thin-film light-emitting diodes; SiC:H-SiCGe:H; TFLED; brightness; electroluminescence threshold voltage; high-reflectance layer; injection current density; optoelectronic characteristics; rapid thermal annealing; Brightness; Current density; Electroluminescence; Glass; Light emitting diodes; PIN photodiodes; Reflectivity; Substrates; Threshold voltage; Transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
