Title :
Noise parameter modeling for InP-based pseudomorphic HEMTs [InAlAs-InGaAs]
Author :
Ando, Yuji ; Cappy, Alain ; Marubashi, K. ; Onda, Kazuhiko ; Miyamoto, Hironobu ; Kuzuhara, Masaaki
Author_Institution :
Kansai Electron. Res. Labs., NEC Corp., Ohtsu, Japan
fDate :
9/1/1997 12:00:00 AM
Abstract :
The effect of electron mobility (μn) on noise properties for InP-based pseudomorphic HEMTs has been analyzed based on the impedance field model. The analysis predicts that increasing μ n improves the minimum noise figure (Fmin) and associated gain not only because the unity current gain cut-off frequency increases but also because the source resistance is reduced. The analysis also predicts that increasing μn reduces the input noise resistance due to higher transconductance but hardly influences the noise-optimum impedance. Furthermore, it is predicted that the decrease in Fmin with increasing μn becomes less significant above 11000 cm2/Vs due to larger diffusion noise. Calculated results compare well with the measured scattering and noise parameters for InxGa1-xAs(x=0.53, 0.7, and 0.8) channel devices. Similar dependence of noise parameters on μn is shown in the theoretical and experimental results
Keywords :
III-V semiconductors; aluminium compounds; electron mobility; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device models; semiconductor device noise; III-V semiconductors; InAlAs-InGaAs-InP; diffusion noise; electron mobility; impedance field model; input noise resistance; minimum noise figure; noise parameter modeling; noise-optimum impedance; pseudomorphic HEMTs; scattering parameters; source resistance; unity current gain cut-off frequency; Charge carrier density; Cutoff frequency; Electron mobility; HEMTs; Impedance; Indium; Laboratories; National electric code; Noise figure; Noise reduction;
Journal_Title :
Electron Devices, IEEE Transactions on
