DocumentCode :
1548165
Title :
The influence of vortex pinning and grain boundary structure on critical currents across grain boundaries in YBa/sub 2/Cu/sub 3/O/sub x/
Author :
Miller, D.J. ; Gray, K.E. ; Field, M.B. ; Dongho Kim
Author_Institution :
Div. of Mater. Sci., Argonne Nat. Lab., IL, USA
Volume :
9
Issue :
2
fYear :
1999
fDate :
6/1/1999 12:00:00 AM
Firstpage :
2030
Lastpage :
2033
Abstract :
We have used studies of single grain boundaries in YBCO thin films and bulk bicrystals to study the influence of vortex pinning along a grain boundary on dissipation. The critical current density for transport across grain boundaries in thin films is typically more than an order of magnitude larger than that measured for transport across grain boundaries in bulk samples. For low misorientation angles, the difference in critical current density within the grains that form the boundary can contribute to the substantial differences in current density measured across the boundary. However, substantial differences exist in the critical current density across boundaries in thin film compared to bulk bicrystals even in the higher angle regime in which grain boundary dissipation dominates. The differences in critical current density in this regime can be understood on the basis of vortex pinning along the boundary.
Keywords :
barium compounds; bicrystals; critical current density (superconductivity); grain boundaries; high-temperature superconductors; superconducting thin films; yttrium compounds; YBa/sub 2/Cu/sub 3/O/sub 7/; YBa/sub 2/Cu/sub 3/O/sub x/; bulk bicrystals; critical current density; cross-grain boundary transport; dissipation; grain boundary structure; misorientation angle; single grain boundaries; thin films; vortex pinning; Critical current; Critical current density; Current density; Current measurement; Density measurement; Grain boundaries; Materials science and technology; Motion measurement; Transistors; Yttrium barium copper oxide;
fLanguage :
English
Journal_Title :
Applied Superconductivity, IEEE Transactions on
Publisher :
ieee
ISSN :
1051-8223
Type :
jour
DOI :
10.1109/77.784863
Filename :
784863
Link To Document :
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