• DocumentCode
    1548201
  • Title

    Performance of antireflecting coating-AlGaAs window layer coupling for terrestrial concentrator GaAs solar cells

  • Author

    Valle, Carlos Algora del ; Alcaraz, Manuel Felices

  • Author_Institution
    Inst. de Energia Solar, Univ. Politecnica de Madrid, Spain
  • Volume
    44
  • Issue
    9
  • fYear
    1997
  • fDate
    9/1/1997 12:00:00 AM
  • Firstpage
    1499
  • Lastpage
    1506
  • Abstract
    In this paper, we present the performance of optical coating systems coupled with AlGaAs window layers over GaAs solar cells. Single, double, and triple antireflecting coatings and window layers with constant and graded aluminum content are considered. Comparison between constant and graded window layers is established. To better represent reality, practical factors such as absorption of materials even for antireflecting coatings and the oxidation at window layer surface due to its high aluminum content are also included in the calculations. The design criteria to determine the optimum thickness of each layer is the achievement of maximum photogenerated current density. For this purpose and to account for terrestrial concentrator GaAs solar cells, the inclusion of direct terrestrial solar spectrum together with the internal spectral response of the device are taken into account. Finally, the best antireflecting coating/AlGaAs window layer couplings for different cases are presented
  • Keywords
    III-V semiconductors; antireflection coatings; gallium arsenide; optical windows; oxidation; solar cells; solar control films; solar energy concentrators; AlGaAs-GaAs; III-V semiconductors; antireflecting coating-window layer coupling; direct terrestrial solar spectrum; graded window layers; internal spectral response; oxidation; photogenerated current density; terrestrial concentrator solar cells; Absorption; Aluminum; Coatings; Gallium arsenide; Optical coupling; Optical materials; Optical refraction; Optical surface waves; Optical variables control; Photovoltaic cells;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.622607
  • Filename
    622607