DocumentCode
1548217
Title
A new approach to extract the threshold voltage of MOSFETs
Author
Ortiz-Conde, Adelmo ; Fernandes, Emanuel D Gouveia ; Liou, J.J. ; Hassan, Md Rofiqul ; García-Sánchez, Francisco J. ; De Mercato, Giovanni ; Wong, Waisum
Author_Institution
Dept. de Electron., Simon Bolivar Univ., Caracas, Venezuela
Volume
44
Issue
9
fYear
1997
fDate
9/1/1997 12:00:00 AM
Firstpage
1523
Lastpage
1528
Abstract
A new method is presented to extract the threshold voltage of MOSFETs. It is developed based on an integral function which is insensitive to the drain and source series resistances of the MOSFETs. The method is tested in the environments of circuit simulator (SPICE), device simulation (MEDICI), and measurements
Keywords
MOSFET; SPICE; circuit analysis computing; semiconductor device models; MEDICI; MOSFETs; SPICE; circuit simulation; device simulation; integral function; semiconductor device measurements; series resistances; threshold voltage extraction; Circuit simulation; Circuit testing; Electrical resistance measurement; Filters; MOSFET circuits; Medical simulation; Medical tests; SPICE; Threshold voltage; Transconductance;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.622610
Filename
622610
Link To Document