Title :
Base transit time of the bipolar transistor in quasi-saturation
Author :
Dai, Y. ; Yuan, J.S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA
fDate :
9/1/1997 12:00:00 AM
Abstract :
The base transit time of the bipolar transistor (BJT) in quasi-saturation has been evaluated. The base transit time increases with quasi-saturation effect and reaches the maximum when the bipolar transistor is in hard saturation
Keywords :
bipolar transistors; equivalent circuits; semiconductor device models; base transit time; bipolar transistor; cutoff frequency; hard saturation; quasi-saturation mode; transistor models; Bipolar transistors; Current density; Cutoff frequency; Degradation; Delay effects; Integrated circuit interconnections; Power supplies; Semiconductor device modeling; Solid state circuits; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
