• DocumentCode
    1548263
  • Title

    Rapid thermal annealing on the characteristics of polysilicon thin-film transistors in practical TFT SRAM process

  • Author

    Lee, Kan Yuan ; Yean Kuen Pang ; Chen, Chii-Wen ; Liang, Mong Song ; Wuu, Shou Gwo

  • Author_Institution
    Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
  • Volume
    44
  • Issue
    9
  • fYear
    1997
  • fDate
    9/1/1997 12:00:00 AM
  • Firstpage
    1561
  • Lastpage
    1562
  • Abstract
    In the practical thin-film transistor (TFT) SRAM process, the rapid thermal contact annealing (RTA) would seriously deteriorate the subthreshold characteristics of TFTs but it can improve the maximum transconductance. We suggest that these degradations are due to the generation of the deep states and we find these degradations can be recovered by a low-temperature anneal in H2/N2 gas ambient
  • Keywords
    MOS memory circuits; SRAM chips; ULSI; elemental semiconductors; rapid thermal annealing; silicon; thin film transistors; H2-N2; TFT SRAM process; deep states; low-temperature anneal; maximum transconductance; polysilicon thin-film transistors; rapid thermal annealing; subthreshold characteristics; Boron; Integrated circuit technology; Leakage current; Random access memory; Rapid thermal annealing; Rapid thermal processing; Simulated annealing; Thermal degradation; Thin film transistors; Ultra large scale integration;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.622618
  • Filename
    622618
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1548263