Low-heat high-power scaling using InGaAs-diode-pumped Yb:YAG lasers

Author

Bruesselbach, Hans W. ; Sumida, David S. ; Reeder, Robin A. ; Byren, Robert W.

Author_Institution

Hughes Res. Labs., Malibu, CA, USA

Volume

3

Issue

1

fYear

1997

fDate

2/1/1997 12:00:00 AM

Firstpage

105

Lastpage

116

Abstract

We report to our knowledge the highest to date quasi-CW output power, 600 W and pulse energy, >1 J, for an InGaAs diode-pumped Yb:YAG laser. In separate preliminary results, we have also obtained 225 W of average output power under true CW diode pumping. This performance was obtained using a laser head designed to be part of a master oscillator power amplifier (MOPA) operating at 3 kW. We summarize why the diode-pumped Yb:YAG crystal laser is ideal for scaling to high average powers and the different approaches being pursued. We also report our latest results for side-pumped rod devices

Keywords

optical pumping; solid lasers; ytterbium; 1 J; 225 W; 3 kW; 600 W; InGaAs; InGaAs diode-pumped Yb:YAG laser; InGaAs-diode-pumped Yb:YAG lasers; YAG:Yb; YAl5O12:Yb; average output power; high average power scaling; laser head design; low-heat high-power scaling; master oscillator power amplifier; pulse energy; quasi-CW output power; side-pumped rod devices; true CW diode pumping; Diodes; Indium gallium arsenide; Optical design; Optical pulses; Oscillators; Power amplifiers; Power generation; Power lasers; Pulse amplifiers; Pump lasers;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.585822

Filename

585822