Monte Carlo simulations of carrier transport in AlGaInP laser diodes

Author

Crow, G.C. ; Abram, R.A.

Author_Institution

Dept. of Phys., Durham Univ., UK

Volume

33

Issue

9

fYear

1997

fDate

9/1/1997 12:00:00 AM

Firstpage

1551

Lastpage

1556

Abstract

A self-consistent ensemble Monte Carlo simulation of charge transport in AlGaInP quantum-well (QW) lasers has been developed in an effort to understand the temperature sensitivity of these devices. In particular, the lasing capability of a three-well design has been studied at 300 and 360 K. Although the electron and hole leakage currents are found to increase with the temperature, this does not explain a reduction in the emitted light hole emission time intensity for the particular device studied. Instead, the fall in the light output is due to increased emission from the QW´s, since this reduces the net electron and hole capture efficiency

Keywords

III-V semiconductors; Monte Carlo methods; aluminium compounds; carrier mobility; gallium compounds; indium compounds; laser theory; quantum well lasers; semiconductor device models; sensitivity; 300 K; 360 K; AlGaInP; AlGaInP QW lasers; AlGaInP laser diodes; Monte Carlo simulations; carrier transport; charge transport; electron capture efficiency; electron leakage currents; emitted light hole emission time intensity; hole capture efficiency; hole leakage currents; self-consistent ensemble Monte Carlo simulation; temperature sensitivity; three-well design; Charge carrier processes; Diode lasers; Electron emission; Electron optics; Laser modes; Optical design; Photonic band gap; Quantum well lasers; Semiconductor lasers; Temperature sensors;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.622636

Filename

622636