• DocumentCode
    1548674
  • Title

    InAs0.97N0.03/InGaAs/InP multiple quantum well lasers with emission wavelength λ=2.38 μm

  • Author

    Shih, Ding-Kang ; Hao-Hsiung Lin ; Lin, Y.H.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • Volume
    37
  • Issue
    22
  • fYear
    2001
  • fDate
    10/25/2001 12:00:00 AM
  • Firstpage
    1342
  • Lastpage
    1343
  • Abstract
    Application of a novel InAsN alloy on a laser device is reported for the first time. The four-period InAs0.97N0.03-In0.53Ga0.47 As-InP strained multiple quantum well laser, grown by gas source molecular beam epitaxy with an RF-coupled plasma nitrogen source, lased under pulsed operation at 2.38 μm at 260 K. A threshold current density of 3.6 KA/cm2 at 260 K and a characteristic temperature of 62 K have been achieved
  • Keywords
    III-V semiconductors; chemical beam epitaxial growth; current density; gallium arsenide; indium compounds; plasma deposition; quantum well lasers; waveguide lasers; 2.38 micron; 260 K; InAs0.97N0.03-In0.53Ga0.47 As-InP; InAs0.97N0.03/InGaAs/InP multiple quantum well lasers; InAsN alloy; RF-coupled plasma nitrogen source; RF-plasma assisted GSMBE; characteristic temperature; emission wavelength; gas source molecular beam epitaxy; pulsed operation; ridge waveguide InAsN/InGaAs laser; threshold current density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.20010894
  • Filename
    964284
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1548674