Title :
InAs0.97N0.03/InGaAs/InP multiple quantum well lasers with emission wavelength λ=2.38 μm
Author :
Shih, Ding-Kang ; Hao-Hsiung Lin ; Lin, Y.H.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
10/25/2001 12:00:00 AM
Abstract :
Application of a novel InAsN alloy on a laser device is reported for the first time. The four-period InAs0.97N0.03-In0.53Ga0.47 As-InP strained multiple quantum well laser, grown by gas source molecular beam epitaxy with an RF-coupled plasma nitrogen source, lased under pulsed operation at 2.38 μm at 260 K. A threshold current density of 3.6 KA/cm2 at 260 K and a characteristic temperature of 62 K have been achieved
Keywords :
III-V semiconductors; chemical beam epitaxial growth; current density; gallium arsenide; indium compounds; plasma deposition; quantum well lasers; waveguide lasers; 2.38 micron; 260 K; InAs0.97N0.03-In0.53Ga0.47 As-InP; InAs0.97N0.03/InGaAs/InP multiple quantum well lasers; InAsN alloy; RF-coupled plasma nitrogen source; RF-plasma assisted GSMBE; characteristic temperature; emission wavelength; gas source molecular beam epitaxy; pulsed operation; ridge waveguide InAsN/InGaAs laser; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.20010894
