Title :
(100) and (111) Si MOS transistors fabricated with low growth temperature (400°C) gate oxide by Kr/O2 microwave-excited high-density plasma
Author :
Hamada, Tatsufumi ; Saito, Yuji ; Hirayama, Masaki ; Sugawa, Sigetoshi ; Aharoni, Herzl ; Ohmi, Tadahiro
Author_Institution :
Dept. of Electron. Eng., Tohoku Univ., Sendai, Japan
fDate :
11/1/2001 12:00:00 AM
Abstract :
A drastic reduction in the growth temperature (400°C) of highly reliable SiO2 gate oxides grown by a Kr/O2 microwave-excited high-density plasma technique is shown to yield MOS I-V characteristics comparable to those obtained in transistors with conventionally grown dry gate oxides at 900°C. The benefits of this technique are summarized
Keywords :
MOSFET; dielectric thin films; elemental semiconductors; krypton; oxygen; plasma deposition; semiconductor technology; silicon; silicon compounds; (100) Si substrate; (111) Si substrate; 400 degC; Kr; Kr-O2; MOS I-V characteristics; O2; Si; Si MOS transistors; Si MOSFET; SiO2 gate oxides; SiO2-Si; growth temperature reduction; highly reliable gate oxides; low growth temperature gate oxide; low-temperature process; microwave-excited high-density plasma; oxygen radical; surface orientation; Annealing; Boron; Ion implantation; Leakage current; Oxidation; Plasma density; Plasma immersion ion implantation; Plasma materials processing; Plasma temperature; Substrates;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
