Title :
Differential-voltage attenuator based on floating-gate MOS transistors and its applications
Author :
Vlassis, S. ; Siskos, S.
Author_Institution :
Dept. of Phys., Thessaloniki Univ., Greece
fDate :
11/1/2001 12:00:00 AM
Abstract :
In this brief, a very simple differential voltage attenuator based on floating-gate MOS transistors (FGMOS) is proposed. The attenuator constructed by only two stacked identical FGMOS in saturation region, provides a voltage output proportional to the difference of the two input voltages. The advantages of this attenuator are the low supply operation, the rail-to-rail input range with small linearity error and the single-ended input processing. A very efficient technique to transform any circuit that requires only balanced inputs into the single-ended counterpart based on the attenuator, is proposed. Using this technique, a number of single-ended computational circuits are produced such as voltage squarer, four-quadrant multiplier, and vector summation circuit. The circuits can be fabricated in standard double-poly, double-metal CMOS technology and they are suitable for analogue signal processing and neural networks applications. SPICE simulation results using 2-μm MIETEC CMOS process parameters demonstrate the feasibility and the accuracy of the circuits
Keywords :
MOSFET circuits; SPICE; analogue processing circuits; attenuators; neural nets; 2 micron; CMOS technology; SPICE simulation; analogue signal processing; differential voltage attenuator; floating gate MOS transistor; four-quadrant multiplier; neural network; single-ended computational circuit; vector summation circuit; voltage squarer; Attenuators; CMOS analog integrated circuits; CMOS process; CMOS technology; Linearity; MOSFETs; Neural networks; Rail to rail inputs; Signal processing; Voltage;
Journal_Title :
Circuits and Systems I: Fundamental Theory and Applications, IEEE Transactions on