Title :
Electro-optic S-parameter and electric-field profiling measurement of microwave integrated circuits
Author :
Dudley, R.A. ; Roddie, A.G. ; Bannister, D.J. ; Gifford, A.D. ; Krems, T. ; Facon, P.
Author_Institution :
Centre for Electromagn. Metrol., Nat. Phys. Lab., Teddington, UK
fDate :
5/1/1999 12:00:00 AM
Abstract :
An S-parameter measurement system based on electro-optic sampling for the on-wafer testing of microwave integrated circuits is presented. Conventional network-analyser measurements on passive circuits up to 20 GHz are used to establish a calibration and measurement procedure to allow S21 measurement on further circuits with 0.5 dB uncertainty. Extension of these rules to the noninvasive testing of active microwave circuits, coupling waveguides and digital circuits is demonstrated with a spatial resolution of 8 μm and submillivolt sensitivity
Keywords :
MMIC; S-parameters; active networks; calibration; electric field measurement; electro-optical devices; integrated circuit measurement; integrated circuit testing; microwave measurement; network analysers; 20 GHz; MMIC testing; S-parameter measurement system; S21 measurement; calibration; coupling waveguides; digital circuits; electric-field profiling measurement; electro-optic sampling; failure analysis; microwave integrated circuits; network-analyser; noninvasive testing; on-wafer testing; spatial resolution; submillivolt sensitivity;
Journal_Title :
Science, Measurement and Technology, IEE Proceedings -
DOI :
10.1049/ip-smt:19990171
