Electro-optic S-parameter and electric-field profiling measurement of microwave integrated circuits

Author

Dudley, R.A. ; Roddie, A.G. ; Bannister, D.J. ; Gifford, A.D. ; Krems, T. ; Facon, P.

Author_Institution

Centre for Electromagn. Metrol., Nat. Phys. Lab., Teddington, UK

Volume

146

Issue

3

fYear

1999

fDate

5/1/1999 12:00:00 AM

Firstpage

117

Lastpage

122

Abstract

An S-parameter measurement system based on electro-optic sampling for the on-wafer testing of microwave integrated circuits is presented. Conventional network-analyser measurements on passive circuits up to 20 GHz are used to establish a calibration and measurement procedure to allow S₂₁ measurement on further circuits with 0.5 dB uncertainty. Extension of these rules to the noninvasive testing of active microwave circuits, coupling waveguides and digital circuits is demonstrated with a spatial resolution of 8 μm and submillivolt sensitivity

Keywords

MMIC; S-parameters; active networks; calibration; electric field measurement; electro-optical devices; integrated circuit measurement; integrated circuit testing; microwave measurement; network analysers; 20 GHz; MMIC testing; S-parameter measurement system; S₂₁ measurement; calibration; coupling waveguides; digital circuits; electric-field profiling measurement; electro-optic sampling; failure analysis; microwave integrated circuits; network-analyser; noninvasive testing; on-wafer testing; spatial resolution; submillivolt sensitivity;

fLanguage

English

Journal_Title

Science, Measurement and Technology, IEE Proceedings -

Publisher

iet

ISSN

1350-2344

Type

jour

DOI

10.1049/ip-smt:19990171

Filename

785306