Appearance of Anisotropic Magnetoresistance and Electric Potential Distribution in Si-Based Multiterminal Devices With Fe Electrodes

Author

Nakane, Ryosho ; Sato, Seiki ; Kokutani, S. ; Tanaka, Mitsuru

Author_Institution

Department of Electrical Engineering and Information Systems, The University of Tokyo, Hongo 1138656, Tokyo, Japan

Volume

3

fYear

2012

fDate

7/4/1905 12:00:00 AM

Firstpage

3000404

Lastpage

3000404

Abstract

We have investigated the influence of anisotropic magnetoresistance (AMR) on nonlocal signals in Si-based multiterminal devices with ferromagnetic Fe electrodes. The AMR of the Fe electrodes has a significant influence on nonlocal signals when the in-plane device structure is not optimized. Our conformal mapping calculations show that it is virtually impossible to realize a pure spin current by spin diffusion because of the electric potential distribution in the depth direction in the Si channel when the ferromagnetic electrodes are directly fabricated on the Si channel. We discuss the influence of structure on the electric potential distribution, which is indispensable for an analysis of spin-dependent transport.

Keywords

Anisotropic magnetoresistance; Electric potential; Electrodes; Electromagnetic measurements; Iron; Magnetoelectronics; Spin electronics; electromagnetic measurements; electrostatic potentials; magnetoelectronics; pure spin current;

fLanguage

English

Journal_Title

Magnetics Letters, IEEE

Publisher

ieee

ISSN

1949-307X

Type

jour

DOI

10.1109/LMAG.2012.2201698

Filename

6226880