Monolithic integrated blanking up-converter

Author

West, M. ; Kumar, Mahesh

Author_Institution

American Electron. Lab. Inc., Landsdale, PA, USA

Volume

38

Issue

9

fYear

1990

fDate

9/1/1990 12:00:00 AM

Firstpage

1227

Lastpage

1231

Abstract

A novel GaAs monolithic integrated DC-coupled up-converter is presented. It up-converts a 0.1- to 0.5-GHz signal to 0.6 to 1.75 GHz. The high level of integration has been achieved in a small chip size of 1.22 mm×1.22 mm by utilizing active matching techniques. A wideband local oscillator (LO) amplifier, an active 180° splitter, a double-balanced mixer, an RF amplifier, an actively matched IF amplifier, and an RF blanking circuit are integrated on a GaAs chip. The up-converter exhibits an 8-dB conversion gain, a maximum input/output voltage standing wave ratio (VSWR) of less than 1.6, and a 40-dB RF blanking for an IF of 0.1 to 0.5 GHz and LO of 0.5-1.25 GHz. The measured results are in good agreement with the simulated results

Keywords

III-V semiconductors; MMIC; frequency convertors; gallium arsenide; 0.1 to 0.5 GHz; 0.6 to 1.75 GHz; 8 dB; GaAs; RF amplifier; RF blanking circuit; active 180° splitter; active matching techniques; actively matched IF amplifier; blanking up-converter; chip size; conversion gain; double-balanced mixer; maximum input/output voltage standing wave ratio; monolithic integrated DC-coupled up-converter; wideband local oscillator amplifier; Blanking; Broadband amplifiers; Costs; Frequency conversion; Gain; Gallium arsenide; Microwave integrated circuits; Power dissipation; Radio frequency; Radiofrequency amplifiers;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.58647

Filename

58647