Title :
Monolithic, high transimpedance gain (3.3 kΩ), 40 Gbit/s InP-HBT photoreceiver with differential outputs
Author :
Huber, A. ; Huber, D. ; Morf, T. ; Jäckel, H. ; Bergamaschi, C. ; Hurm, V. ; Ludwig, M. ; Schlechtweg, M.
Author_Institution :
Electron. Lab., Swiss Federal Inst. of Technol., Zurich, Switzerland
fDate :
5/27/1999 12:00:00 AM
Abstract :
A monolithically integrated, lumped 40 Gbit/s photoreceiver consisting of an InGaAs pin-photodetector, an InP-InGaAs SHBT transimpedance and a differential post-amplifier is presented. The complete circuit has an optical/electrical bandwidth of 28 GHz. The open 40 Gbit/s eye diagrams demonstrate the successful highspeed operation of the photoreceiver. The transimpedance gain of the circuit was measured to be 3.3 kΩ (differential) which is the highest transimpedance yet reported for any monolithically integrated 40 Gbit/s photoreceiver.
Keywords :
indium compounds; 28 GHz; 40 Gbit/s; Gbit/s InP-HBT photoreceiver; Gbit/s eye diagrams; Gbit/s photoreceiver; InGaAs pin-photodetector; InP-InGaAs; InP/InGaAs SHBT transimpedance; differential outputs; differential post-amplifier; electrical bandwidth; high transimpedance gain; monolithic; monolithically integrated; monolithically integrated 40 Gbit/s photoreceiver;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990597
