Title :
A high-performance, miniaturized X-band active mixer for DBS receiver application with on-chip IF noise filter
Author :
Michels, R. ; Wallace, P. ; Goyal, R. ; Scheinberg, N. ; Patel, M.
Author_Institution :
Anadigics Inc., Warren, NJ, USA
fDate :
9/1/1990 12:00:00 AM
Abstract :
A GaAs monolithic microwave integrated circuit (MMIC) dual-gate FET active mixer at X-band is described that is designed for direct broadcast satellite (DBS) applications. All of the components of the mixer, including biasing circuitry, RF, LO, and IF matching networks, as well as the IF noise filter, are implemented monolithically into a 25-mil×30-mil area. The design was process tolerant, and layout was compact for manufacturability and low cost. The mixer was integrated monolithically into a complete single-chip DBS low-noise block (LNB) converter. The active mixer has a conversion gain of 5.5 dB and a single-sideband noise figure of 8.5 dB. The circuit is manufactured using a 0.5-μm gate length, buried p- depletion mode MESFET process without substrate-through via holes
Keywords :
III-V semiconductors; MMIC; direct broadcasting by satellite; gallium arsenide; mixers (circuits); radio receivers; 0.5 micron; 11.7 to 12.5 GHz; 5.5 dB; 8.5 dB; DBS receiver; GaAs monolithic microwave integrated circuit; IF matching networks; LO matching networks; MMIC; RF matching networks; X-band active mixer; biasing circuitry; buried p- depletion mode MESFET process; conversion gain; direct broadcast satellite; dual-gate FET active mixer; low noise block converter; on-chip IF noise filter; single-sideband noise figure; Application specific integrated circuits; FET integrated circuits; Gallium arsenide; MMICs; Manufacturing processes; Microwave FET integrated circuits; Microwave FETs; Microwave integrated circuits; Monolithic integrated circuits; Satellite broadcasting;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
