• DocumentCode
    1549398
  • Title

    Room-temperature pulsed operation of GaAsSb-GaAs vertical-cavity surface-emitting lasers

  • Author

    Anan, T. ; Yamada, M. ; Tokutome, K. ; Sugou, S. ; Nishi, K. ; Kamei, A.

  • Author_Institution
    Opt. Interconnection NEC Lab., Ibaraki, Japan
  • Volume
    35
  • Issue
    11
  • fYear
    1999
  • fDate
    5/27/1999 12:00:00 AM
  • Firstpage
    903
  • Lastpage
    904
  • Abstract
    GaAs-based long-wavelength vertical-cavity surface-emitting lasers with a GaAsSb quantum well active layer have been fabricated for the first time. Room temperature pulsed oscillation was obtained at a wavelength of 1.22 μm with a threshold current of 20 mA for devices with 25 μm square mesa.
  • Keywords
    gallium arsenide; 1.22 mum; 20 mA; GaAs-based long-wavelength vertical-cavity surface-emitting lasers; GaAsSb; GaAsSb quantum well active layer; GaAsSb-GaAs; GaAsSb-GaAs vertical-cavity surface-emitting lasers; quantum well lasers; room-temperature pulsed operation; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19990633
  • Filename
    785383
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1549398