• DocumentCode
    1549490
  • Title

    Quantitative analysis of Si/GexSi1-x/Si heterojunction bipolar transistors with linearly graded Ge profile

  • Author

    Li, G. ; Neugroschel, A. ; Sah, C.T.

  • Author_Institution
    Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
  • Volume
    35
  • Issue
    11
  • fYear
    1999
  • fDate
    5/27/1999 12:00:00 AM
  • Firstpage
    936
  • Lastpage
    938
  • Abstract
    A new experimental methodology for the analysis of Si/GexSi1-x/Si HBT yields quantitative values for the important transistor parameters, such as the energy gap reduction and the built-in electric field due to Ge, and the minority-carrier base diffusion length, lifetime and transit time. The method also enables a charge-control analysis of the base current to be made. A demonstration is presented for a GeSi heterojunction bipolar transistor with a linearly-graded Ge profile in the base. The methodology can be extended for arbitrary material composition and doping profile in the base.
  • Keywords
    heterojunction bipolar transistors; Si-GeSi-Si; arbitrary doping profile; arbitrary material composition; built-in electric field; charge-control analysis; energy gap reduction; heterojunction bipolar transistors; linearly graded profile; minority-carrier base diffusion length; minority-carrier lifetime; minority-carrier transit time; transistor parameters;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19990607
  • Filename
    785422
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1549490