DocumentCode :
1549585
Title :
A 5-Gb/s 2.1–2.2-GHz Bandpass 
Modulator for Switch-Mode Power Amplifier
Author :
Ostrovskyy, Philip ; Gustat, Hans ; Ortmanns, Maurits ; Scheytt, J. Christoph
Author_Institution :
IHP Microelectron., Frankfurt (Oder), Germany
Volume :
60
Issue :
8
fYear :
2012
Firstpage :
2524
Lastpage :
2531
Abstract :
A tunable fourth-order bandpass ΔΣ modulator (BDSM) designed and fabricated in 0.25μm SiGe BiCMOS technology is presented. The designed modulator relaxes switching conditions for the amplification stage of the switch-mode power amplifier in comparison to the BDSM architecture. The BDSM is clocked at 5 GHz, while the notch frequency can be tuned in a range of 2.1-2.2 GHz. The modulator achieves 46.6-dB signal-to-noise and distortion ratio in 10-MHz bandwidth for a sine-wave input at 2.2 GHz consuming 330 mW from a 3-V supply. The BDSM was also tested with a single-channel WCDMA signal. It has demonstrated 42.2-dBc adjacent channel leakage ratio at 5-MHz offset and less than 2.1% error vector magnitude over the tuning range.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; UHF power amplifiers; code division multiple access; delta-sigma modulation; microwave power amplifiers; switched mode power supplies; SiGe; SiGe BiCMOS technology; adjacent channel leakage ratio; bit rate 5 Gbit/s; error vector magnitude; frequency 2.1 GHz to 2.2 GHz; frequency 5 GHz; notch frequency; power 330 mW; sine-wave input; single-channel WCDMA signal; size 0.25 mum; switch-mode power amplifier; tunable fourth-order bandpass ΔΣ modulator; voltage 3 V; Bandwidth; Clocks; Encoding; Frequency modulation; Switches; Transistors; Analog-to-digital converters; RF and mixed-signal ingrated-circuit (IC) design; SiGe BiCMOS; WCDMA; switching power amplifiers (PAs);
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2012.2203143
Filename :
6227312
Link To Document :
