Silicon detectors with 3-D electrode arrays: fabrication and initial test results

The first three-dimensional detectors with n and p electrodes that penetrate through the silicon substrate have been fabricated. Some expected properties, including low depletion voltages, wide voltage plateaus before leakage current limits are reached, and rapid charge collection are reviewed. Fabrication steps and initial test results for leakage currents and infrared signal detection are covered. The authors conclude with a description of current work, including fabrication of active-edge detectors, ones with sensitive areas that should extend to their physical edge