Title :
Solid State Magnetic Field Sensor With Zero Power Consumption
Author :
Bakhoum, Ezzat G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of West Florida, Pensacola, FL, USA
Abstract :
This paper introduces a new type of solid-state magnetic field sensor that is similar in size to a Hall effect sensor and that offers a sensitivity that is approximately an order of magnitude better than a Hall effect sensor. The significant advantage of the new sensor, however, is that it consumes no power. The sensor consists of a radioactive β-particle source and a silicon p-n junction. If no magnetic field is applied, the β particles enter the p-n junction and generate a steady dc voltage. Under the influence of a magnetic field, however, the β particles (or secondary electrons generated therefrom) follow a curved path and miss the p-n junction, and the magnitude of the output voltage drops. The new sensor will be very advantageous in battery-powered consumer products applications because it consumes no power.
Keywords :
consumer products; electric potential; electric sensing devices; elemental semiconductors; magnetic field measurement; magnetic sensors; p-n junctions; power consumption; silicon; Hall effect sensor; Si; battery-powered consumer product application; curved path junction; output voltage drop; radioactive β-particle source; secondary electron; silicon p-n junction; solid state magnetic field sensor; steady DC voltage; zero power consumption; Equations; Hall effect; Kinetic energy; Magnetic noise; Magnetic tunneling; P-n junctions; Silicon; Beta-particle detectors; beta-particle sources; betavoltaics; hall-effect sensor; magnetic field sensor;
Journal_Title :
Components, Packaging and Manufacturing Technology, IEEE Transactions on
DOI :
10.1109/TCPMT.2013.2279796