Design and Fabrication of Dual-Trench Epitaxial Diode Array for High-Density Phase-Change Memory

Author

Zhang, Chao ; Song, Zhi-Tang ; Wu, Guan-Ping ; Liu, Bo ; Wan, Xu-Dong ; Wang, Lei ; Wang, Lian-Hong ; Yang, Zuo-Ya ; Chen, Bomy ; Feng, Song-Lin

Author_Institution

State Key Lab. of Functional Mater. for Inf., Chinese Acad. of Sci., Shanghai, China

Volume

32

Issue

8

fYear

2011

Firstpage

1014

Lastpage

1016

Abstract

For the first time, the design and fabrication of dual-trench epitaxial p/n junction diodes in a commercially standard 0.13-μm complementary metal-oxide-semiconductor process are introduced in this letter. The 16 × 16 diode arrays with 0.196-μm² (5F²) cell size have been successfully fabricated, showing the excellent electrical properties of its sufficient current drive ability in excess of 12.5 mA/μm², large on-/off-current ratio greater than nine orders of magnitude, and its excellent crosstalk immunity. A dual-trench epitaxial diode could be used as the access device for high-density phase-change memory and could also produce highly scalable embedded applications for 45-nm node and beyond, due to its unique process integration scheme.

Keywords

CMOS digital integrated circuits; phase change memories; semiconductor diodes; CMOS; complementary metal-oxide-semiconductor process; crosstalk immunity; dual-trench epitaxial diode array; high-density phase-change memory; p-n junction diodes; size 0.13 mum; size 45 nm; Arrays; Epitaxial growth; Phase change random access memory; Programming; Semiconductor diodes; Substrates; Dual trench isolated; epitaxial diode; phase-change random access memory (PCRAM);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2155028

Filename

5871270