DocumentCode :
1549844
Title :
A 24 GHz Low-Noise Amplifier Using RF Junction Varactors for Noise Optimization and CDM ESD Protection in 90 nm CMOS
Author :
Tsai, Ming-Hsien ; Hsu, Shawn S H
Author_Institution :
Dept. of Electr. Eng. & Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Volume :
21
Issue :
7
fYear :
2011
fDate :
7/1/2011 12:00:00 AM
Firstpage :
374
Lastpage :
376
Abstract :
This letter presents an ESD-protected 24 GHz low-noise amplifier (LNA) in 90 nm CMOS using RF junction varactors for noise optimization and ESD protection simultaneously. One of the junction varactors, inserted as an extra gate-source capacitance, provides an effective CDM ESD protection, and is also used for power-constrained simultaneous noise and input matching. The measured results demonstrate a 2.7 A (corresponding to a 4 kV HBM) and an 11.4 A ESD protection levels using transmission line pulse and very fast transmission line pulse tests, respectively. Under a power consumption of 9.1 mW, the ESD-protected LNA presents a NF of 2.9 dB and power gain of 15.2 dB at the center frequency of 24 GHz.
Keywords :
CMOS analogue integrated circuits; electrostatic discharge; low noise amplifiers; microwave amplifiers; varactors; CDM ESD protection; CMOS; LNA; RF junction varactor; current 11.4 A; current 2.7 A; frequency 24 GHz; gain 15.2 dB; gain 2.9 dB; gate-source capacitance; low-noise amplifier; noise optimization; power 9.1 mW; size 90 nm; transmission line pulse test; CMOS integrated circuits; Electrostatic discharge; Junctions; Logic gates; Noise; Noise measurement; Varactors; Charge device model (CDM); electrostatic discharge (ESD); low-noise amplifier (LNA); transmission line pulse (TLP); very fast transmission line pulse (VFTLP);
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2011.2152387
Filename :
5871296
Link To Document :
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