• DocumentCode
    1549882
  • Title

    Design of Highly Efficient Three-Stage Inverted Doherty Power Amplifier

  • Author

    Lee, Mun-Woo ; Kam, Sang-Ho ; Lee, Yong-Sub ; Jeong, Yoon-Ha

  • Author_Institution
    Dept. of Electr. Eng., POSTECH, Pohang, South Korea
  • Volume
    21
  • Issue
    7
  • fYear
    2011
  • fDate
    7/1/2011 12:00:00 AM
  • Firstpage
    383
  • Lastpage
    385
  • Abstract
    This letter reports the highly efficient three-stage inverted Doherty power amplifier (IDPA) using 30 W and 50 W Si LDMOSFETs. The characteristic impedances of the output combiner are derived to achieve high efficiency at a large back-off power (BOP). The output matching networks and offset lines of the carrier and peaking cells are used to modulate the load impedance. The transmission line in the input path of the carrier cell is inserted to adjust the delay among the carrier and peaking cells. The drain efficiency (DE) of 40.3% with a gain of 9 dB is achieved at output power of 42 dBm (8.5 dB BOP) and the DE above 40% is maintained in wide output range for a 2.14 GHz continuous wave signal. For a one-carrier WCDMA signal at an output power of 40 dBm (10.5 dB BOP), the DE of 35% with the gain of 9.2 dB is achieved.
  • Keywords
    MOSFET; power amplifiers; LDMOSFET; back-off power; carrier cell; characteristic impedance; drain efficiency; frequency 2.14 GHz; gain 9 dB; gain 9.2 dB; load impedance; one-carrier WCDMA signal; output matching network; power 30 W; power 50 W; three-stage inverted Doherty power amplifier; transmission line; Gain; Multiaccess communication; Power amplifiers; Power generation; Spread spectrum communication; Transmission line measurements; Wireless communication; Doherty power amplifier (PA); LDMOSFET; WCDMA; efficiency; inverted Doherty PA;
  • fLanguage
    English
  • Journal_Title
    Microwave and Wireless Components Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1531-1309
  • Type

    jour

  • DOI
    10.1109/LMWC.2011.2153840
  • Filename
    5871306