Analysis of waveguide properties of organic semiconductor lasers

The waveguiding properties of organic semiconductor lasers operating at 630 nm have been analysed. Calculations for gain-guided lasers show that single lateral mode operation can be supported in structures having active region widths of under 6 μm, albeit with confinement highly dependent on active layer thickness. Ridge-guided structures are investigated as a means of providing single-mode operation with stable lateral confinement at high-gain values. It is shown that ridge heights of about 0.03 μm are sufficient to provide lateral confinement of about 0.5