DocumentCode
1550021
Title
Fabrication and performance of InGaAlAs MQW distributed Bragg reflector lasers with grooved surface gratings formed by reactive beam etching
Author
Oku, S. ; Kondo, S. ; Noguchi, Y. ; Hirono, T. ; Nakao, M. ; Tamamura, T.
Author_Institution
NTT Opt.-Electonic Lab., Kanagawa, Japan
Volume
146
Issue
1
fYear
1999
fDate
8/1/1999 12:00:00 AM
Firstpage
39
Lastpage
43
Abstract
Grooved surface grating distributed Bragg reflector lasers were fabricated by reactive beam etching after one-step growth of an InGaAlAs multiquantum well active layer and an InP cladding layer. A first-order diffraction grating with a 240 nm period was formed by utilising grooves etched into the cladding layer. The groove depths range between 550 to 900 nm. Single longitudinal mode operation was achieved for devices at all groove depths, DBR lasing with output power of up to 10 mA was obtained. The dependence of the lasing wavelength on device temperature is about 0.1 nm/°C, which indicates the same good stability as standard DBR/DFB lasers. Lasing performance (i.e. injection current against output light power and emission spectra) is discussed in terms of the groove depth of the grating. The relationship between the lasing wavelength shift and the groove depth depth was examined. The coupling coefficient of the Bragg reflectors are estimated to be about SO-180 cm -1 by using the relation between the threshold current density and the reflectivity of the laser cavity mirror
Keywords
III-V semiconductors; aluminium compounds; chemical vapour deposition; distributed Bragg reflector lasers; etching; gallium arsenide; indium compounds; laser modes; laser stability; optical fabrication; quantum well lasers; 10 mA; 550 to 900 nm; Bragg reflectors; DBR lasing; InGaAlAs; InGaAlAs MQW distributed Bragg reflector laser fabrication; InGaAlAs multiquantum well active layer; InP cladding layer; cladding layer; device temperature; emission spectra; first-order diffraction grating; groove depth; groove depths; grooved surface gratings; laser cavity mirror; one-step growth; output light power; output power; reactive beam etching; reflectivity; single longitudinal mode operation; threshold current density;
fLanguage
English
Journal_Title
Optoelectronics, IEE Proceedings -
Publisher
iet
ISSN
1350-2433
Type
jour
DOI
10.1049/ip-opt:19990106
Filename
787773
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