Title :
Piezoelectric InGaAs/AlGaAs laser with intracavity absorber
Author :
Khoo, E.A. ; Pabla, A.S. ; Woodhead, J. ; David, J.P.R. ; Grey, R. ; Rees, G.J.
Author_Institution :
Dept. of Electron. & Electr. Eng., Sheffield Univ., UK
fDate :
8/1/1999 12:00:00 AM
Abstract :
A novel InGaAs-AlGaAs laser integrated with an intracavity absorber grown on a (111)B GaAs substrate is demonstrated, making use of the piezoelectric effect. Transparency in the absorber section at the lasing wavelength can be achieved by using the blue-shifting characteristic of the absorption edge with reverse bias. This is shown by comparison of the lasing wavelengths with the absorption spectra of the laser structure under reverse bias. It is described how approach could offer an alternative route to integrated laser-modulators
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; laser cavity resonators; optical saturable absorption; piezoelectricity; quantum well lasers; spectral line shift; (111)B GaAs substrate; GaAs; InGaAs-AlGaAs; InGaAs-AlGaAs laser; absorber section; absorption edge; absorption spectra; blue-shifting characteristic; integrated laser-modulators; intracavity absorber; lasing wavelength; lasing wavelengths; piezoelectric InGaAs/AlGaAs laser; piezoelectric effect; reverse bias; transparency;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:19990454
