Piezoelectric InGaAs/AlGaAs laser with intracavity absorber

Author

Khoo, E.A. ; Pabla, A.S. ; Woodhead, J. ; David, J.P.R. ; Grey, R. ; Rees, G.J.

Author_Institution

Dept. of Electron. & Electr. Eng., Sheffield Univ., UK

Volume

146

Issue

1

fYear

1999

fDate

8/1/1999 12:00:00 AM

Firstpage

62

Lastpage

66

Abstract

A novel InGaAs-AlGaAs laser integrated with an intracavity absorber grown on a (111)B GaAs substrate is demonstrated, making use of the piezoelectric effect. Transparency in the absorber section at the lasing wavelength can be achieved by using the blue-shifting characteristic of the absorption edge with reverse bias. This is shown by comparison of the lasing wavelengths with the absorption spectra of the laser structure under reverse bias. It is described how approach could offer an alternative route to integrated laser-modulators

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; laser cavity resonators; optical saturable absorption; piezoelectricity; quantum well lasers; spectral line shift; (111)B GaAs substrate; GaAs; InGaAs-AlGaAs; InGaAs-AlGaAs laser; absorber section; absorption edge; absorption spectra; blue-shifting characteristic; integrated laser-modulators; intracavity absorber; lasing wavelength; lasing wavelengths; piezoelectric InGaAs/AlGaAs laser; piezoelectric effect; reverse bias; transparency;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:19990454

Filename

787777