Title :
Anisotropic etching of profiled membrabes for pressure sensors based on silicon-on-insulator structure
Abstract :
The importance of "silicone on insulator" (SOI) structure for pressure sensors is shown. The SOI creations ways including anisotropic etching are considered.
Keywords :
elemental semiconductors; etching; membranes; pressure sensors; silicon; silicon-on-insulator; SOI structure; Si; anisotropic etching; pressure sensor; profiled membrane; silicon-on-insulator structure; Educational institutions; Electronic mail; Etching; Insulators; Sensors; Silicon-on-insulator;
Conference_Titel :
Actual Problems of Electron Devices Engineering (APEDE), 2014 International Conference on
Conference_Location :
Saratov
Print_ISBN :
978-1-4799-3437-9
DOI :
10.1109/APEDE.2014.6958212
