Title :
90 mW 660 nm distributed feedback lasers
Author :
Hagberg, M. ; Pezeshki, B. ; Zou, S. ; Zelinski, M. ; Kolev, E.
Author_Institution :
SDL Inc., San Jose, CA, USA
fDate :
6/10/1999 12:00:00 AM
Abstract :
High efficiency single spatial and spectral mode, 662 nm wavelength distributed feedback lasers have been fabricated from a GaInP/AlInP laser structure. Output powers of up to 90 mW at room temperature were achieved without any spectral mode jumps. These devices should be useful for short and/or visible wavelength applications that require spectral mode stability, such as spectroscopy, interferometry, and high-density optical storage
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium compounds; indium compounds; laser frequency stability; laser modes; semiconductor lasers; 662 nm; 90 mW; GaInP-AlInP; distributed feedback lasers; high-density optical storage; interferometry; mode stability; output powers; short wavelength applications; spectral mode; spectroscopy; visible wavelength applications;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990638
