DocumentCode
1550218
Title
90 mW 660 nm distributed feedback lasers
Author
Hagberg, M. ; Pezeshki, B. ; Zou, S. ; Zelinski, M. ; Kolev, E.
Author_Institution
SDL Inc., San Jose, CA, USA
Volume
35
Issue
12
fYear
1999
fDate
6/10/1999 12:00:00 AM
Firstpage
980
Lastpage
981
Abstract
High efficiency single spatial and spectral mode, 662 nm wavelength distributed feedback lasers have been fabricated from a GaInP/AlInP laser structure. Output powers of up to 90 mW at room temperature were achieved without any spectral mode jumps. These devices should be useful for short and/or visible wavelength applications that require spectral mode stability, such as spectroscopy, interferometry, and high-density optical storage
Keywords
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium compounds; indium compounds; laser frequency stability; laser modes; semiconductor lasers; 662 nm; 90 mW; GaInP-AlInP; distributed feedback lasers; high-density optical storage; interferometry; mode stability; output powers; short wavelength applications; spectral mode; spectroscopy; visible wavelength applications;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19990638
Filename
788056
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