DocumentCode :
1550282
Title :
Si hetero-bipolar transistor with a fluorine-doped SiC emitter and a thin, highly doped epitaxial base
Author :
Sugii, Toshihiro ; Yamazaki, Tatsuya ; Ito, Takashi
Author_Institution :
Fujitsu Lab. Ltd., Atsugi, Japan
Volume :
37
Issue :
11
fYear :
1990
fDate :
11/1/1990 12:00:00 AM
Firstpage :
2331
Lastpage :
2335
Abstract :
The effect of fluorine doping on SiC/Si heterojunction bipolar transistors (HBTs) is studied. The film properties of the fluorine-doped SiC and device characteristics of an HBT using the SiC emitter and a 50-nm-thick, highly doped epitaxial base (1019/cm3) are presented. The current gain is improved from 15 to 80 by doping with fluorine. The current gain is four times larger than that of a conventional poly-Si emitter homo-transistor with the same base structure. In spite of the very thin base, the Early voltage is over 100 V. Forward-bias tunneling current was hardly seen at the emitter-base junction. The fluorine appears to terminate the dangling bonds. The results show the possibility of fabricating transistors with a very thin, highly doped base
Keywords :
elemental semiconductors; fluorine; heterojunction bipolar transistors; semiconductor doping; silicon; silicon compounds; 100 V; 50 nm; Early voltage; HBTs; SiC:F-Si; current gain; device characteristics; emitter-base junction; film properties; heterojunction bipolar transistors; highly doped epitaxial base; semiconductors; very thin base; Bipolar transistors; Delay; Doping; Heterojunction bipolar transistors; MOSFETs; Photonic band gap; Radiative recombination; Silicon carbide; Substrates; Temperature;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.62285
Filename :
62285
Link To Document :
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