Title :
Si hetero-bipolar transistor with a fluorine-doped SiC emitter and a thin, highly doped epitaxial base
Author :
Sugii, Toshihiro ; Yamazaki, Tatsuya ; Ito, Takashi
Author_Institution :
Fujitsu Lab. Ltd., Atsugi, Japan
fDate :
11/1/1990 12:00:00 AM
Abstract :
The effect of fluorine doping on SiC/Si heterojunction bipolar transistors (HBTs) is studied. The film properties of the fluorine-doped SiC and device characteristics of an HBT using the SiC emitter and a 50-nm-thick, highly doped epitaxial base (1019/cm3) are presented. The current gain is improved from 15 to 80 by doping with fluorine. The current gain is four times larger than that of a conventional poly-Si emitter homo-transistor with the same base structure. In spite of the very thin base, the Early voltage is over 100 V. Forward-bias tunneling current was hardly seen at the emitter-base junction. The fluorine appears to terminate the dangling bonds. The results show the possibility of fabricating transistors with a very thin, highly doped base
Keywords :
elemental semiconductors; fluorine; heterojunction bipolar transistors; semiconductor doping; silicon; silicon compounds; 100 V; 50 nm; Early voltage; HBTs; SiC:F-Si; current gain; device characteristics; emitter-base junction; film properties; heterojunction bipolar transistors; highly doped epitaxial base; semiconductors; very thin base; Bipolar transistors; Delay; Doping; Heterojunction bipolar transistors; MOSFETs; Photonic band gap; Radiative recombination; Silicon carbide; Substrates; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on