DocumentCode :
1550326
Title :
Fabrication and thermal-chemical stability of magnetoresistive random-access memory cells using α-Fe2O3 bottom spin valves
Author :
Bae, Seongtae ; Zurn, Shayne ; Egelhoff, William F., Jr. ; Chen, P.J. ; Sheppard, Larry ; Torok, Edward James ; Judy, Jack H.
Author_Institution :
Dept. of Electr. & Comput. Eng., Minnesota Univ., Minneapolis, MN, USA
Volume :
37
Issue :
6
fYear :
2001
fDate :
11/1/2001 12:00:00 AM
Firstpage :
3960
Lastpage :
3968
Abstract :
This paper discusses fabrication, stability and device characteristics of Si/α-Fe2O3 (25 nm)/Co (3 nm)/Cu (2.3 nm)/Co (3.1 nm)Ta2O5 (2.5 nm) giant magnetoresistance (GMR) spin-valve magnetoresistive random-access memory (MRAM) cells 6 μm wide and 18 μm long dimension. Fabricated single-bit and 3×3-bit MRAM cells had very good GMR performance for MRAM characteristics and excellent endurance in undergoing standard high-temperature semiconductor processes. The high thermal, and chemical stability of α-Fe2O3 bottom GMR spin valves is mainly attributed to the good thermal stability associated with the high blocking temperature (about 390°C) and the good corrosion resistance of the α-Fe2O3 antiferromagnetic material. In this paper, models for an individual α-Fe2O3 bottom GMR spin-valve MRAM cell using SPICE device model elements are introduced for the first time. The SPICE model is useful for predicting the MRAM device characteristics related to the speed and power dissipation in different MRAM bit arrays and under various operating conditions
Keywords :
SPICE; corrosion resistance; giant magnetoresistance; iron compounds; magnetic film stores; modelling; random-access storage; spin valves; stability; thermal stability; α-Fe2O3 antiferromagnetic material; 18 micron; 2.5 to 25 nm; 390 degC; 6 micron; GMR spin-valve; MRAM bit arrays; SPICE modelling; Si-Fe2O3-Co-Cu-Co-Ta2O5 ; chemical stability; corrosion resistance; device characteristics; electrical characteristics; fabrication; giant magnetoresistance; high blocking temperature; magnetic characteristics; magnetoresistive RAM cells; power dissipation; random-access memory cells; thermal stability; Antiferromagnetic materials; Chemicals; Fabrication; Giant magnetoresistance; SPICE; Semiconductor process modeling; Spin valves; Temperature; Thermal resistance; Thermal stability;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.966133
Filename :
966133
Link To Document :
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