• DocumentCode
    1550327
  • Title

    Amorphous metal-semiconductor-metal photodetector (MSM-PD) with bottom ridged Cr electrodes

  • Author

    Laih, Li-Hong ; Chang, Tien-Chang ; Chen, Yen-Ann ; Tsay, Wen-Chin ; Hong, Jyh-Wong

  • Author_Institution
    Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
  • Volume
    35
  • Issue
    12
  • fYear
    1999
  • fDate
    6/10/1999 12:00:00 AM
  • Firstpage
    1021
  • Lastpage
    1022
  • Abstract
    An amorphous metal-semiconductor-metal photodetector with ridged electrodes and an absorption layer of 600 nm of intrinsic hydrogenated amorphous silicon-germanium (i-a-SiGe:H) was fabricated on Corning 7059 glass. The ridged electrodes not only increase the volume of the absorption region but also cause a stronger lateral electric field in the absorption layer and hence effectively increase the responsivity of the device
  • Keywords
    Ge-Si alloys; amorphous semiconductors; chromium; electrodes; metal-semiconductor-metal structures; photodetectors; Corning 7059 glass; SiGe:H-Cr; amorphous metal-semiconductor-metal photodetector; bottom ridged Cr electrode; intrinsic hydrogenated amorphous silicon-germanium absorption layer; lateral electric field; responsivity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19990612
  • Filename
    788083
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1550327