Title :
Amorphous metal-semiconductor-metal photodetector (MSM-PD) with bottom ridged Cr electrodes
Author :
Laih, Li-Hong ; Chang, Tien-Chang ; Chen, Yen-Ann ; Tsay, Wen-Chin ; Hong, Jyh-Wong
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
fDate :
6/10/1999 12:00:00 AM
Abstract :
An amorphous metal-semiconductor-metal photodetector with ridged electrodes and an absorption layer of 600 nm of intrinsic hydrogenated amorphous silicon-germanium (i-a-SiGe:H) was fabricated on Corning 7059 glass. The ridged electrodes not only increase the volume of the absorption region but also cause a stronger lateral electric field in the absorption layer and hence effectively increase the responsivity of the device
Keywords :
Ge-Si alloys; amorphous semiconductors; chromium; electrodes; metal-semiconductor-metal structures; photodetectors; Corning 7059 glass; SiGe:H-Cr; amorphous metal-semiconductor-metal photodetector; bottom ridged Cr electrode; intrinsic hydrogenated amorphous silicon-germanium absorption layer; lateral electric field; responsivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990612
