Title :
Large signal frequency dispersion of AlGaN/GaN heterostructure field effect transistors
Author :
Kohn, Erhard ; Daumiller, I. ; Schmid, P. ; Nguyen, N.X.
Author_Institution :
Dept. of Electron. Devices & Circuits, Ulm Univ.
fDate :
6/10/1999 12:00:00 AM
Abstract :
Microwave AlGaN/GaN MODFET power devices have been analysed with respect to their frequency dispersion in terms of transconductance, gate capacitance and large signal output current swing. A electrical equivalent circuit model consistent with all experimental findings, based on the incorporation of a lossy dielectric layer, is presented. It may also enable an interpretation to be made of the RF power compression observed in these devices
Keywords :
III-V semiconductors; aluminium compounds; equivalent circuits; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; AlGaN-GaN; AlGaN/GaN heterostructure field effect transistor; RF power compression; electrical equivalent circuit model; gate capacitance; large signal frequency dispersion; lossy dielectric; microwave MODFET power device; output current swing; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990697
