Title :
Smart-Cut(R) process using metallic bonding: Application to transfer of Si, GaAs, InP thin films
Author :
Aspar, B. ; Jalaguier, E. ; Mas, A. ; Locatelli, C. ; Rayssac, O. ; Moriceau, H. ; Pocas, S. ; Papon, A.M. ; Michaud, J.F. ; Bruel, M.
Author_Institution :
CEA, Centre d´´Etudes Nucleaires de Grenoble, France
fDate :
6/10/1999 12:00:00 AM
Abstract :
The ability to obtain thin films using the Smart-Cut(R) process combined with metallic bonding is demonstrated. New structures have been realised from thin films of Si, GaAs or InP bonded to silicon substrates via metallic layers
Keywords :
semiconductor thin films; GaAs; InP; Si; Smart-Cut process; metallic bonding; semiconductor thin film; silicon substrate;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990663
