DocumentCode
1550380
Title
GaAs MESFET with low current capability grafted onto quartz substrate
Author
Ho, C.-L. ; Wu, M.-C. ; Ho, W.-J. ; Liaw, J.-W.
Author_Institution
Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Volume
146
Issue
3
fYear
1999
fDate
8/1/1999 12:00:00 AM
Firstpage
135
Lastpage
138
Abstract
DC characteristics of a GaAs MESFET, which is grafted onto an optically flat quartz substrate, are presented and discussed. The authors utilised a GaAs MESFET having small current capability in order to avoid heat effects and to magnify the effects brought by transplantation. Improved pinch-off and saturation behaviours, as well as increased drain-gate breakdown voltage, stemming from the insulating property of the quartz substrate were observed. Negative shift of threshold voltage and degraded low-field mobility were also observed and both were attributed to the stresses acting on the active region
Keywords
III-V semiconductors; Schottky gate field effect transistors; carrier mobility; gallium arsenide; semiconductor device breakdown; DC characteristics; GaAs; MESFET; active region; current capability; drain-gate breakdown voltage; heat effects; low-field mobility; pinch-off; saturation behaviours; threshold voltage; transplantation;
fLanguage
English
Journal_Title
Circuits, Devices and Systems, IEE Proceedings -
Publisher
iet
ISSN
1350-2409
Type
jour
DOI
10.1049/ip-cds:19990229
Filename
788097
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