Title :
6 Vpp-66 GHz-ultrabroadband amplifier for fibre-optical transmission systems
Author :
Leich, M. ; Ludwig, M. ; Kuri, A. ; Hulsmann, A. ; Schlechtweg, M.
Author_Institution :
Fraunhofer-Institute of Appl. Solid-State Phys., Freiburg, Germany
fDate :
11/8/2001 12:00:00 AM
Abstract :
A large amount of bandwidth has been achieved with advanced construction methods developed for ultra-high bandwidth distributed amplifiers. A 66 GHz-bandwidth GaAs device with more than 6 Vpp of voltage swing has been manufactured
Keywords :
HEMT integrated circuits; III-V semiconductors; distributed amplifiers; driver circuits; field effect analogue integrated circuits; gallium arsenide; optical communication equipment; optical receivers; photodetectors; power amplifiers; wideband amplifiers; 66 GHz; GHz ultra broadband amplifier; GaAs; GaAs device; HEMT IC; bandwidth; construction methods; distributed amplification; driver circuits; fibre-optical transmission systems; high electron mobility transistors; high-speed photoreceiver front end; power amplifier; quantum well pseudomorphic HEMTs; ultra-high bandwidth distributed amplifiers; voltage swing;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010953
