Effects of well number on temperature characteristics in 1.3-μm AlGaInAs-InP quantum-well lasers

Effects of well number on temperature characteristics have been investigated in 1.3-μm AlGaInAs-InP compressively strained multiple-quantum-well lasers. Well-number dependence of threshold currents (I_th), external quantum efficiencies (η_d ), characteristic temperatures of I_th and η_d arid maximum operation temperatures have been experimentally determined and analyzed. The characteristic temperature of the threshold current (T₀) and the maximum operation temperature (T_max ) were found to increase with increasing the number of quantum wells and a record high pulsed T_max of 220°C has been achieved in lasers with ten wells. In contrast, the characteristic temperature of the external efficiency (T_η) was found to decrease with increasing the number of wells. Because of this opposite well-number dependence of the T₀ and T_η, each of them alone is not necessarily a good measure to optimize the number of wells. Therefore, in this work, me also evaluated a power reduction at a constant current with increasing temperature, which depends on both T₀ and T_η and thus should be a more practical measure of the temperature characteristics, and discuss the optimum number of the quantum wells