Title :
Phototransistor measurements in AlGaN/GaN HBTs
Author :
Chernyak, L. ; Osinsky, A. ; Pearton, S.J. ; Ren, F.
Author_Institution :
Dept. of Phys., Univ. of Central Florida, Orlando, FL, USA
fDate :
11/8/2001 12:00:00 AM
Abstract :
A fast and reliable method for evaluation of transistor gain in n-p-n AlGaN/GaN heterojunction bipolar transistors is demonstrated. The method is based on phototransistor measurements, which are carried out in situ in a scanning electron microscope. Electron beam current was used in these measurements as an analogue of current in the base, which remained floating. The obtained common-emitter DC current gain, β, is ~2.5. This value is in good agreement with the values of β obtained from the conventional three-terminal measurements
Keywords :
III-V semiconductors; aluminium compounds; gain measurement; gallium compounds; heterojunction bipolar transistors; phototransistors; scanning electron microscopy; semiconductor device measurement; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN HBTs; SEM; amplification monitoring; common-emitter DC current gain; electron beam current; in situ measurements; n-p-n heterojunction bipolar transistors; phototransistor measurements; scanning electron microscope; transistor gain;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010948
