Extraction of VCSEL rate-equation parameters for low-bias system simulation

Author

Bruensteiner, Matt ; Papen, George C.

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA

Volume

5

Issue

3

fYear

1999

Firstpage

487

Lastpage

494

Abstract

Laser diode rate-equation parameters are extracted for simulation of on-off keyed digital communication links with below-threshold laser prebiases. The extraction procedure uses measurements of the current-voltage-light characteristic, the ac small-signal response above threshold, and the turn-on delay due to an isolated pulse. Characteristics of the extracted models are discussed in detail. The predictive capability of the extracted models is demonstrated by good agreement between modeled and measured transient response pulse shapes for a prebias current of 0.3 times the threshold current

Keywords

amplitude shift keying; delays; laser theory; optical fibre communication; optical modulation; optical transmitters; semiconductor device models; semiconductor lasers; surface emitting lasers; OOK communication; VCSEL rate-equation parameters; above threshold; ac small-signal response; current-voltage-light characteristic; extracted models; isolated pulse; laser diode rate-equation parameter extraction; low-bias system simulation; measured transient response pulse shapes; on-off keyed digital communication links; prebias current; predictive capability; threshold current; turn-on delay; Current measurement; Delay; Digital communication; Diode lasers; Laser modes; Predictive models; Pulse measurements; Shape measurement; Transient response; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.788410

Filename

788410