• DocumentCode
    1550552
  • Title

    pnp Si resonant interband tunnel diode with symmetrical NDR

  • Author

    Jin, N. ; Berger, P.R. ; Rommel, S.L. ; Thompson, P.E. ; Hobart, K.D.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Ohio State Univ., Columbus, OH, USA
  • Volume
    37
  • Issue
    23
  • fYear
    2001
  • fDate
    11/8/2001 12:00:00 AM
  • Firstpage
    1412
  • Lastpage
    1414
  • Abstract
    A Si-based resonant interband tunnel diode (RITD) is presented with a pnp configuration so that an integrated RITD can be easily used to form a latch. The IN characteristics of this pnp RITD show symmetrical negative differential resistance (NDR) regions in both forward and reverse bias. The top diode shows a peak-to-valley current ratio (PVCR) of 1.63 with peak current density (Jp) of 1.5 kA/cm2, while the bottom diode shows a PVCR of 1.51 with J p of 2.0 kA/cm2
  • Keywords
    elemental semiconductors; negative resistance; resonant tunnelling diodes; silicon; I-V characteristics; Si; Si resonant interband tunnel diode; Si-based RITD; fabrication process; growth temperature control; latch; p-n-p configuration; symmetrical NDR regions; symmetrical negative differential resistance; tunnel diode logic circuits;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20010961
  • Filename
    966556
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1550552