Title :
Metamorphic DBR and tunnel-junction injection. A CW RT monolithic long-wavelength VCSEL
Author :
Boucart, J. ; Starck, C. ; Gaborit, F. ; Plais, A. ; Bouche, N. ; Derouin, E. ; Remy, J.C. ; Bonnet-Gamard, J. ; Goldstein, L. ; Fortin, C. ; Carpentier, D. ; Salet, P. ; Brillouet, F. ; Jacquet, J.
Author_Institution :
Groupement d´´Interet Econ., Alcatel Corp. Res. Center, Marcoussis, France
Abstract :
We present and give details about the conception and realization of the first monolithic long wavelength vertical-cavity surface-emitting laser (VCSEL) operating continuous wave at room temperature. This approach relies on two originalities: a metamorphic GaAs-AlAs distributed Bragg reflector and an injection through a reverse-biased tunnel junction. Record output powers as high as 1 mW and a maximum operating temperature of 47°C have thus been achieved. Furthermore, in this paper, we present the optimization work on the different constituting parts of the VCSEL
Keywords :
distributed Bragg reflector lasers; integrated optoelectronics; optimisation; semiconductor lasers; surface emitting lasers; tunnelling; 1 mW; 47 C; CW RT monolithic long-wavelength VCSEL; GaAs-AlAs; GaAs-AlAs distributed Bragg reflector; continuous wave; maximum operating temperature; metamorphic DBR injection; monolithic long wavelength vertical-cavity surface-emitting laser; optimizatio; record output powers; reverse-biased tunnel junction; room temperature; tunnel-junction injection; Costs; Dielectrics; Distributed Bragg reflectors; Indium phosphide; Mirrors; Optical surface waves; Surface emitting lasers; Temperature; Thermal conductivity; Vertical cavity surface emitting lasers;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.788414
