DocumentCode :
1550571
Title :
Lasing characteristics of InGaAs-GaAs polarization controlled vertical-cavity surface-emitting laser grown on GaAs (311) B substrate
Author :
Nishiyama, Nobuhiko ; Mizutani, Akimasa ; Hatori, Nobuaki ; Arai, Masakazu ; Koyama, Fumio ; Iga, Kenichi
Author_Institution :
Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan
Volume :
5
Issue :
3
fYear :
1999
Firstpage :
530
Lastpage :
536
Abstract :
We have demonstrated an oxide confinement polarization controlled vertical-cavity surface-emitting laser (VCSEL) grown on a GaAs (311)B substrate. The polarization state was well controlled along the [2¯33] crystal direction due to an anisotropic gain in the (311)B plane. We fabricated a small oxide aperture VCSEL with a threshold of 260 μA and realized single-transverse mode and single-polarization operation for the first time. The sidemode suppression ratio (SMSR) was 35 dB and the orthogonal polarization suppression ratio (OPSR) was 25 dB. In addition, we have measured polarization and transverse mode characteristics of multi- and single-transverse mode devices under high-speed modulation. In the multimode device of 12 μm×12 pm oxide aperture, we have achieved stable polarization operation of over 25-dB OPSR up to 10 Gb/s and have observed no power penalty due to polarization instability under 2.5-Gb/s pseudorandom modulation. The single-mode device showed stable single-transverse mode and polarization under the modulation conduction up to 5 GHz of sinusoidal modulation. SMSR and OPSR were over 30 and 10 dB, respectively
Keywords :
III-V semiconductors; electro-optical modulation; gallium arsenide; indium compounds; laser cavity resonators; laser modes; laser stability; light polarisation; substrates; surface emitting lasers; 10 Gbit/s; 12 mum; 2.5 Gbit/s; 260 muA; GaAs; GaAs (311) B substrate; InGaAs-GaAs; InGaAs-GaAs polarization controlled vertical-cavity surface-emitting laser; anisotropic gain; high-speed modulation; lasing characteristics; orthogonal polarization suppression ratio; oxide confinement polarization controlled VCSEL; polarization state; sidemode suppression ratio; single-mode device; single-polarization operation; single-transverse mode; sinusoidal modulation; small oxide aperture VCSEL; stable single-transverse mode; Anisotropic magnetoresistance; Data communication; Gallium arsenide; High speed optical techniques; Laser modes; Optical control; Optical polarization; Substrates; Surface emitting lasers; Vertical cavity surface emitting lasers;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/2944.788415
Filename :
788415
Link To Document :
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