Design of low-loss single-mode vertical-cavity surface-emitting lasers

Author

Bond, Aaron E. ; Dapkus, P.Daniel ; O´Brien, John D.

Author_Institution

Univ. of Southern California, Los Angeles, CA, USA

Volume

5

Issue

3

fYear

1999

Firstpage

574

Lastpage

581

Abstract

An in depth study of aperture placement relative to the electric field standing wave of oxide aperture vertical-cavity surface-emitting lasers (VCSELs) is presented. VCSELs with oxide apertures placed at a node and at an antinode are studied for their dependence of internal loss, far field, threshold current, and efficiency on the position of a thin AlO_x current aperture relative to the longitudinal standing wave in the cavity

Keywords

III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; optical design techniques; optical losses; surface emitting lasers; AlO; InGaAs; InGaAs low loss single mode SQW DBR VCSEL laser design; VCSEL; antinode; aperture placement; electric field standing wave; far field; internal loss; laser cavity resonators; longitudinal standing wave; low-loss single-mode vertical-cavity surface-emitting laser design; node; oxide aperture; oxide aperture vertical-cavity surface-emitting lasers; thin AlO_x current aperture; threshold current; Apertures; Bonding; Diffraction; Distributed Bragg reflectors; Optical design; Resonance; Semiconductor lasers; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.788420

Filename

788420