Title :
Ion-implanted GaAs-InGaAs lateral current injection laser
Author :
Tager, A.A. ; Gaska, R. ; Avrutsky, I.A. ; Fay, M. ; Chik, H. ; Springthorpe, A. ; Eicher, S. ; Xu, J.M. ; Shur, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada
Abstract :
We have fabricated and characterized lateral current injection (LCI) ridge-waveguide lasers formed by ion-implanted injectors. Comprehensive optical and electrical measurements have been performed over a wide temperature range (10 K-300 K) on two sets of lasers with differing ridge widths and active region structures. Several new phenomena unique to the LCI mechanism have been observed, including a positive differential resistance kink at threshold, and inverse temperature-dependencies of quantum efficiency and threshold current at cryogenic temperatures. Electron-hole mobility disparity, local carrier nonpinning above threshold due to photon-assisted ambipolar diffusion, and intrinsically higher current densities have been identified as the major factors governing these LCI laser characteristics. The results have important implications for future LCI laser design and ultimate performance
Keywords :
III-V semiconductors; cryogenics; electron mobility; gallium arsenide; hole mobility; indium compounds; ion implantation; optical fabrication; quantum well lasers; ridge waveguides; waveguide lasers; 10 to 300 K; GaAs-InGaAs; GaAs-InGaAs lateral current injection laser; LCI laser characteristics; LCI laser design; LCI mechanism; active region structures; cryogenic temperatures; electrical measurements; electron-hole mobility disparity; intrinsically higher current densities; inverse temperature-dependencies; ion-implanted; ion-implanted injectors; optical measurements; photon-assisted ambipolar diffusion; positive differential resistance kink; quantum efficiency; ridge-waveguide lasers; threshold current; Contacts; Gas lasers; Ion implantation; Laser modes; Optical device fabrication; Optoelectronic devices; Quantum well lasers; Semiconductor devices; Semiconductor lasers; Waveguide lasers;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.788433
