DocumentCode :
1550649
Title :
Ultrasmall and ultralow threshold GaInAsP-InP microdisk injection lasers: design, fabrication, lasing characteristics, and spontaneous emission factor
Author :
Fujita, Masayuki ; Sakai, Atsushi ; Baba, Toshihiko
Author_Institution :
Div. of Electr. & Comput. Eng., Yokohama Nat. Univ., Japan
Volume :
5
Issue :
3
fYear :
1999
Firstpage :
673
Lastpage :
681
Abstract :
We have calculated lasing characteristics of current injection microdisk lasers of several microns in diameter, taking account of the scattering loss at center posts and the carrier diffusion effect. We found that the optimum width of the disk wing exposed to the air is 0.6-0.7 μm and the minimum threshold current is nearly 10 μA for the disk diameter of 2 μm. The internal differential quantum efficiency can be 95% if the transparent carrier density is reduced to 7.5×1017 cm-3 and the diffusion constant is increased to 8 cm2/s. In the experiment, we have obtained the room temperature continuous-wave operation of a GaInAsP-InP device of 3 μm in diameter, for the first time, with a record low threshold of 150 μA. This achievement was mainly owing to the reduction of the scattering loss at the disk edge, and hence the reduction of the threshold current density. The spontaneous emission factor was estimated to be 6×10-3. This value was much reduced by the large detuning of the lasing wavelength against the spontaneous emission peak. A larger value over 0.1, which is expected for such a small device, will be obtained by the wavelength tuning and the narrowing of the spontaneous emission spectrum
Keywords :
III-V semiconductors; carrier density; gallium arsenide; gallium compounds; indium compounds; light scattering; microdisc lasers; optical design techniques; optical fabrication; optical losses; quantum well lasers; spontaneous emission; 0.6 to 0.7 mum; 10 muA; 150 muA; 2 mum; 3 mum; 95 percent; GaInAsP-InP; GaInAsP-InP device; GaInAsP-InP microdisk injection lasers; carrier diffusion effect; diffusion constant; disk diameter; internal differential quantum efficiency; laser tuning; lasing characteristics; lasing wavelength; low threshold; minimum threshold current; room temperature continuous-wave operation; scattering loss; semiconductor laser design; semiconductor laser fabrication; spontaneous emission facto; spontaneous emission factor; spontaneous emission peak; spontaneous emission spectrum; threshold current densit; transparent carrier density; ultralow threshold; wavelength tuning; Laser modes; Laser tuning; Microcavities; Optical design; Optical device fabrication; Particle scattering; Semiconductor lasers; Spontaneous emission; Temperature; Threshold current;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/2944.788434
Filename :
788434
Link To Document :
بازگشت