Continuous-wave operation of GaInAsSb-GaSb type-II quantum-well ridge-lasers

Author

Joullié, A. ; Glastre, G. ; Blondeau, R. ; Nicolas, J.C. ; Cuminal, Y. ; Baranov, A.N. ; Wilk, A. ; Garcia, M. ; Grech, P. ; Alibert, C.

Author_Institution

Centre d´´Electron. et de Microoptoelectron. de Montpellier, Univ. des Sci. et Tech. du Languedoc, Montpellier, France

Volume

5

Issue

3

fYear

1999

Firstpage

711

Lastpage

714

Abstract

Ridge-waveguide laser diodes emitting near 2.38 μm have been fabricated from GaInAsSb-GaSb type-II quantum-well (QW) structures grown by molecular beam epitaxy. These devices operated continuous-wave (CW) at room temperature, what is obtained for the first time from a type-II QW laser. At 23°C threshold currents in the range 60-140 mA and CW output powers exceeding 1 mW/facet were obtained. These lasers showed a tendency to operate in a single longitudinal mode with a temperature red shift of 0.1 nm/°C and a current red shift of 0.06 nm/mA

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; laser transitions; molecular beam epitaxial growth; optical fabrication; quantum well lasers; red shift; ridge waveguides; semiconductor growth; waveguide lasers; 2.38 mum; 23 C; 60 to 140 mA; CW output powers; CW room temperature lasing; GaInAsSb-GaSb; GaInAsSb-GaSb type-II QW lasers; GaInAsSb-GaSb type-II quantum-well ridge-lasers; continuous-wave operation; current red shift; molecular beam epitaxy; ridge-waveguide laser diodes; single longitudinal mode; temperature red shift; Absorption; Diode lasers; Gas lasers; Laser modes; Molecular beam epitaxial growth; Quantum well lasers; Semiconductor lasers; Temperature; Threshold current; Waveguide lasers;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.788440

Filename

788440