DocumentCode
1550677
Title
Self-sustained pulsation at 65°C through reduced carrier overflow in AlGaInP laser diodes
Author
Sawano, Hiroyuki ; Hotta, Hitoshi ; Kobayashi, Ryuji ; Ohsawa, Youichi ; Kobayashi, Kenichi
Author_Institution
Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan
Volume
5
Issue
3
fYear
1999
Firstpage
715
Lastpage
720
Abstract
Self-sustained pulsation at 65°C under continuous-wave operation was obtained in AlGaInP laser diodes with a saturable-absorbing layer in part of the p-type cladding layer. The carrier overflow was significantly reduced to enable high-temperature performance by increasing the number of well layers in the active layer to four and increasing the compressive strain of the active layer (εact=+0.5%). The effect of the carrier overflow on self-sustained pulsation was investigated by analyzing the lasing spectrum and lasing polarization. The large amount of luminescence from the saturable-absorbing layer demonstrated that excessive carrier overflow at high temperature prevents the saturable absorbing layer functioning as an absorber
Keywords
III-V semiconductors; aluminium compounds; claddings; gallium compounds; indium compounds; laser beams; optical saturable absorption; photoluminescence; quantum well lasers; 65 C; AlGaInP; AlGaInP laser diodes; absorber; active layer; carrier overflow; compressive strain; continuous-wave operation; excessive carrier overflow; high temperature; high-temperature performance; lasing polarization; lasing spectrum; luminescence; p-type cladding layer; reduced carrier overflow; saturable absorbing layer; saturable-absorbing layer; self-sustained pulsation; well layers; Diode lasers; Indium phosphide; Laser feedback; Laser noise; Light sources; Optical feedback; Optical noise; Optical polarization; Semiconductor device noise; Temperature;
fLanguage
English
Journal_Title
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
1077-260X
Type
jour
DOI
10.1109/2944.788441
Filename
788441
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